* >48% typical power added efficiency
* 29 dB small signal gain
* 110 W typical PSAT
* Operation up to 40 V
* High breakdown voltage
* High temper.

* Civil and military pulsed radar amplifiers Note: Features are typical performance across frequency under 25 °C op.

The CMPA5259080S is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher.

CMPA5259025F

CMPA5259025S

CMPA5259050F

CMPA5259050S

CMPA5585030F

CMPA0060002D

CMPA0060002F

CMPA0060025D

CMPA0060025F

CMPA0527005F

CMPA0530002S

CMPA0560008S

CMPA1C1D060D