MAPC-A3006-AB transistor equivalent, gan on sic transistor.
* Saturated Power: 18 W
* Drain Efficiency: 70%
* Small Signal Gain: 12.5 dB
* Lead-Free Air Cavity Ceramic Package
* RoHS* Compliant
Applications
* Avionics - TACAN, DME, IFF
* Military Radio
* L, S, C-band Radar
* Electronic Warfare
* ISM
* .
The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and commercial related applications.
Offered in a thermally-enhanced flange packa.
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