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PTRA097058NB - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTRA097058NB Package PG-HB2SOF-6-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 1.9 V, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 28 70 Efficiency 24 50 20 30 16 Gain 10 12 -10.

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PTRA097058NB Thermally-Enhanced High Power RF LDMOS FET 800 W, 48 V, 730 – 960 MHz Description The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTRA097058NB Package PG-HB2SOF-6-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 1.9 V, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 28 70 Efficiency 24 50 20 30 16 Gain 10 12 -10 8 -30 PAR @ 0.
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