MSN7007F Overview
MSN7007F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN7007F Key Features
- VDS =700V,ID =7A RDS(ON) <1.5 Ω @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard switched and high frequency circuits
- Electronic ballast and transformer