MSP0330D Description
MSP0330D -30V(D-S) P-Channel Enhancement Mode Power MOS FET General.
MSP0330D Key Features
- VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- High side switch for full bridge converter
- DC/DC converter for LCD display