* Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID IDM IS PD TJ, TSTG Gate-Source Voltage Continuous
MT3407
MOS-TECH
1.00 MB
P-channel power mosfet.
MOS-TECH Semiconductor Co.,LTD P-Channel Enhancement Mode Field Effect Transistor MT3407 Product Summary VDS= -30V ID= -4.1A (VGS= -10V) ≦ ΩRDS(ON).
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