Download the MT3407 datasheet PDF.
This datasheet also includes the MT3407-MOS variant, as both parts are published together in a single manufacturer document.
Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS ID IDM IS PD
TJ, TSTG
Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range
Notes:
≦1. Surface Mounted on 1” x.