MT6011 Key Features
- 10A, -60V, RDS(on) = 0.07Ω @VGS = -10 V
- Low gate charge ( typical 21 nC)
- Low Crss ( typical 80 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Part: MT6011
- Manufacturer: MOS-TECH
- Size: 550.11 KB
Related MOS-TECH Datasheets
| Part Number | Description |
|---|---|
| MT6010 | N-Channel Power MOSFET |
| MT6401 | P-Channel Power MOSFET |
| MT6405 | P-Channel Power MOSFET |
| MT6680 | N-Channel Power MOSFET |
| MT6968 | N-Channel Power MOSFET |
MT6011 Description
These P-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-state resistance, provide superior swit ching performance, and wit hstand a hi gh energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as automotive,...