MT6405 Datasheet, MOS-TECH

* Max rDS(on) =  mΩ @ VGS = -10 V, ID = -A
* Max rDS(on) = 75 mΩ @ VGS = -4.5 V, ID = -3.4A
* Low Gate Charge
* High performance trench technology for .

Applications
* Battery management
* Load switch
* Battery protection
* DC/DC conversion Features
*.

This P-Channel Logic Level MOSFET is produced using Mos-tech's advanced PowerTrench process. It has been optimized for battery power management applications. Applications
* Battery management
* Load switch
* Battery protection
* DC/DC.