MT6680 Datasheet, MOS-TECH

* Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A
* HBM ESD protection level of 3KV typical (note 3)
* High perform.

common in Notebook Computers and Portable Battery Packs. D D D D SO-8 Pin 1 G S S S D D D D G S S S MOSFET Maxim.

This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications comm.