Description
The MDIS1501 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 30V ID = 67.4A @VGS = 10V RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
DD
G DS
G S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC TA=25oC TA=70oC
Thermal Characteristics
Characteristics Thermal Resistance, Ju.
MDIS1501-MagnaChip.pdf
