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MDIS1502 - N-Channel Trench MOSFET

Description

The MDIS1502 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDIS1502 is suitable device for DC to DC converter and general purpose applications.

Features

  • VDS = 30V ID = 45.7A @VGS = 10V RDS(ON) (MAX) < 8.5mΩ @VGS = 10V < 13.0mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD G DS G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, J.

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Datasheet Details

Part number MDIS1502
Manufacturer MagnaChip
File Size 692.75 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDIS1502 Datasheet
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MDIS1502 – Single N-Channel Trench MOSFET 30V MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mΩ General Description The MDIS1502 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDIS1502 is suitable device for DC to DC converter and general purpose applications. Features VDS = 30V ID = 45.7A @VGS = 10V RDS(ON) (MAX) < 8.5mΩ @VGS = 10V < 13.0mΩ @VGS = 4.
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