MDIS2N60 - N-Channel Trench MOSFET

Description

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

VDS = 600V ID = 1.9A RDS(ON) ≤ 4.5Ω @ VGS = 10V @ VGS = 10V.

MagnaChip

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Datasheet Details

Part number	MDIS2N60
Manufacturer	MagnaChip
File Size	876.02 KB
Description	N-Channel Trench MOSFET
Datasheet	MDIS2N60 Datasheet
Additional preview pages of the MDIS2N60 datasheet.

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Full PDF Text Transcription

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MDIS2N60 N-channel MOSFET 600V MDIS2N60 N-Channel MOSFET 600V, 1.9A, 4.5Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 1.9A RDS(ON) ≤ 4.

Published: Apr 10, 2017 |