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MDIS1501 - N-Channel Trench MOSFET

Description

The MDIS1501 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDIS1501 is suitable device for DC to DC converter and general purpose applications.

Features

  • VDS = 30V ID = 67.4A @VGS = 10V RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD G DS G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Ju.

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Datasheet Details

Part number MDIS1501
Manufacturer MagnaChip
File Size 703.89 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDIS1501 Datasheet
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MDIS1501 – Single N-Channel Trench MOSFET 30V MDIS1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6mΩ General Description The MDIS1501 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDIS1501 is suitable device for DC to DC converter and general purpose applications. Features VDS = 30V ID = 67.4A @VGS = 10V RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.
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