MDIS2N65B - N-Channel Trench MOSFET

Description

The MDIS2N65B uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.

MDIS2N65B is suitable device for SMPS, compact ballast, battery charger and general purpose applications.

Features

VDS = 650V.
ID = 1.95A.
RDS(ON) ≤ 4.5Ω @VGS = 10V @VGS = 10V.

MagnaChip

📥 Download Datasheet

Datasheet Details

Part number	MDIS2N65B
Manufacturer	MagnaChip
File Size	903.10 KB
Description	N-Channel Trench MOSFET
Datasheet	MDIS2N65B Datasheet
Additional preview pages of the MDIS2N65B datasheet.

📁 Similar Datasheet

MDI011036Q - +5V/-28V PIN Diode Switch Driver (Monzite)
MDI100-12A3 - IGBT Module (IXYS)
MDI145-12A3 - IGBT (IXYS Corporation)
MDI150-12A4 - IGBT (IXYS Corporation)
MDI200-12A4 - IGBT Module (IXYS)
MDI300-12A4 - IGBT Modules (IXYS)
MDI400-12E4 - IGBT Module (IXYS Corporation)
MDI40A0BA2XXIX - (MDI40A Series) Panel Meters and Controllers (Carlo Gavazzi)
MDI40AxxxxXXIX - (MDI40A Series) Panel Meters and Controllers (Carlo Gavazzi)
MDI550-12A4 - IGBT Module (IXYS)

Other Datasheets by MagnaChip

MDIS2N60 - N-Channel Trench MOSFET
MDIS1501 - N-Channel Trench MOSFET
MDIS1502 - N-Channel Trench MOSFET
MDIS1903 - Single N-channel Trench MOSFET
MDIS3N40 - N-Channel MOSFET
MDIS4N60 - N-Channel MOSFET
MDIS4N65B - N-Channel Trench MOSFET
MDIS5N40 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

MDIS2N65B N-channel MOSFET 650V MDIS2N65B N-Channel MOSFET 650V, 1.95A, 4.5Ω General Description The MDIS2N65B uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDIS2N65B is suitable device for SMPS, compact ballast, battery charger and general purpose applications. Features  VDS = 650V  ID = 1.95A  RDS(ON) ≤ 4.

Published: Apr 10, 2017 |