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MDIS1903 - Single N-channel Trench MOSFET

Description

The MDIS1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDIS1903 is suitable device for DC to DC converter and general purpose applications.

Features

  •  VDS = 100V  ID = 12.8A @VGS = 10V  RDS(ON) (MAX) < 105mΩ @VGS = 10V < 110mΩ @VGS = 6.0V D GDS G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case.

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Datasheet Details

Part number MDIS1903
Manufacturer MagnaChip
File Size 796.19 KB
Description Single N-channel Trench MOSFET
Datasheet download datasheet MDIS1903 Datasheet
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MDIS1903 – Single N-Channel Trench MOSFET 100V MDIS1903 Single N-channel Trench MOSFET 100V, 12.8A, 105mΩ ㄹ General Description The MDIS1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDIS1903 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 100V  ID = 12.8A @VGS = 10V  RDS(ON) (MAX) < 105mΩ @VGS = 10V < 110mΩ @VGS = 6.
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