Description
The MDIS1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 100V ID = 12.8A @VGS = 10V RDS(ON) (MAX)
< 105mΩ @VGS = 10V < 110mΩ @VGS = 6.0V
D
GDS
G S
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=70oC
TC=25oC TC=70oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case.
MDIS1903-MagnaChip.pdf
