MDIS2N65B Key Features
- VDS = 650V
- ID = 1.95A
- RDS(ON) ≤ 4.5Ω
- Part: MDIS2N65B
- Manufacturer: MagnaChip
- Size: 903.10 KB
Related MagnaChip Datasheets
| Part Number | Description |
|---|---|
| MDIS2N60 | N-Channel Trench MOSFET |
| MDIS1501 | N-Channel Trench MOSFET |
| MDIS1502 | N-Channel Trench MOSFET |
| MDIS1903 | Single N-channel Trench MOSFET |
| MDIS3N40 | N-Channel MOSFET |
MDIS2N65B Description
The MDIS2N65B uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. MDIS2N65B is suitable device for SMPS, pact ballast, battery charger and general purpose applications.