Description
The MDU5512 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- FET1
FET2
VDS = 30V ID = 46.1A
VDS = 30V ID = 80A @VGS = 10V
RDS(ON) < 8.9mΩ < 12.5mΩ
< 3.6mΩ @VGS = 10V < 4.5mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5 S1/D2
S2
6
S2 S2
7 G2
8
4
1
D1 3 D1
2
D1
1
G1
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=100oC TA=25o.
MDU5512-MagnaChip.pdf
