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MDU5692S - Dual N-Channel MOSFET

Description

The MDU5692S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU5692S is suitable for DC/DC converter and general purpose applications.

Features

  • FET1 FET2  VDS = 30V  ID = 52A VDS = 30V ID = 100A @VGS = 10V  RDS(ON) < 5.4mΩ < 8.5mΩ < 2.0mΩ @VGS = 10V < 2.5mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 12 3 4 S2 5 S2 6 S2 S1/D2 7 8 G2 D1 4 3 D1 D1 2 1 G1 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=70oC TA=25oC.

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Datasheet Details

Part number MDU5692S
Manufacturer MagnaChip
File Size 1.54 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet MDU5692S Datasheet

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Full PDF Text Transcription

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MDU5692S - Dual N-Channel Trench MOSFET 30V MDU5692S Dual Asymmetric N-channel Trench MOSFET 30V General Description The MDU5692S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU5692S is suitable for DC/DC converter and general purpose applications. Features FET1 FET2  VDS = 30V  ID = 52A VDS = 30V ID = 100A @VGS = 10V  RDS(ON) < 5.4mΩ < 8.5mΩ < 2.0mΩ @VGS = 10V < 2.5mΩ @VGS = 4.
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