MDU5512 Datasheet | MagnaChip

Description The MDU5512 uses advanced Magna Chip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU5512 is suitable for DC/DC converter and general purpose applications. Features FET1 FET2  VDS = 30V  ID = 46.1A VDS = 30V ID = 80A @VGS = 10V  RDS(ON) < 8.9mΩ < 12.5mΩ < 3.6mΩ @VGS = 10V < 4.5mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 S1/D2 S2 S2 S2 7 G2 D1 3 D1 D1 G1 Absolute Maximum Ratings (Ta = 25o C) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25o C TC=100o C TA=25o C TA=70o C TC=25o C TC=100o C TA=25o C TA=70o C Symbol VDSS VGSS EAS TJ, Tstg DD1 GG1...