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MDU5512 - Dual N-Channel Trench MOSFET

Description

The MDU5512 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU5512 is suitable for DC/DC converter and general purpose applications.

Features

  • FET1 FET2  VDS = 30V  ID = 46.1A VDS = 30V ID = 80A @VGS = 10V  RDS(ON) < 8.9mΩ < 12.5mΩ < 3.6mΩ @VGS = 10V < 4.5mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 S1/D2 S2 6 S2 S2 7 G2 8 4 1 D1 3 D1 2 D1 1 G1 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TA=25o.

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Datasheet Details

Part number MDU5512
Manufacturer MagnaChip
File Size 1.42 MB
Description Dual N-Channel Trench MOSFET
Datasheet download datasheet MDU5512 Datasheet

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Full PDF Text Transcription

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MDU5512 - Dual N-Channel Trench MOSFET 30V MDU5512 Dual Asymmetric N-channel Trench MOSFET 30V General Description The MDU5512 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU5512 is suitable for DC/DC converter and general purpose applications. Features FET1 FET2  VDS = 30V  ID = 46.1A VDS = 30V ID = 80A @VGS = 10V  RDS(ON) < 8.9mΩ < 12.5mΩ < 3.6mΩ @VGS = 10V < 4.5mΩ @VGS = 4.
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