Description
The MDU5692S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- FET1
FET2
VDS = 30V ID = 52A
VDS = 30V ID = 100A @VGS = 10V
RDS(ON) < 5.4mΩ < 8.5mΩ
< 2.0mΩ @VGS = 10V < 2.5mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
12 3 4
S2 5 S2
6 S2 S1/D2 7 8 G2
D1 4 3
D1 D1
2
1
G1
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=70oC TA=25oC.
MDU5692S-MagnaChip.pdf
