MMSF60R580RZ - N-channel MOSFET

MagnaChip

General Description

MMSF60R580RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

This device combines improvement of switching speed with effective switching behavior.

Key Features

Low Power Loss by High Speed Switching and Low On-Resistance.
Excellent ESD robustness.
100% Avalanche Tested.
Green Package-Pb Free Plating, Halogen Free.
Zener-Integrated.

📥 Download Datasheet

MMSF60R580RZ n-channel mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MMSF60R580RZ
Manufacturer	MagnaChip
File Size	738.12 KB
Description	N-channel MOSFET
Datasheet	MMSF60R580RZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMSF60R580RZ Datasheet MMSF60R580RZ 600V 0.58Ω N-channel MOSFET  Description MMSF60R580RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. This device combines improvement of switching speed with effective switching behavior. And it also will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.58 3 8 12.