4N60C Datasheet - Maple Semiconductor

600V N-Channel MOSFET

4N60C Features

* - 4.0A, 600V, RDS(on)typ. = 2.2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60C SLF4N60C VD

4N60C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

4N60C Datasheet (299.91 KB)

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Datasheet Details

Part number:

4N60C

Manufacturer:

Maple Semiconductor

File Size:

299.91 KB

Description:

600v n-channel mosfet.

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4N60C 600V N-Channel MOSFET Maple Semiconductor

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4N60C Features

4N60C General Description

Datasheet Details

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Description:

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