4N60C Datasheet 600V N-Channel MOSFET

Manufacturer: Maple Semiconductor

4N60C 600v n-channel mosfet by Maple Semiconductor - Datasheet Preview

Datasheet Details

Part number	4N60C
Manufacturer	Maple Semiconductor
File Size	299.91 KB
Description	600V N-Channel MOSFET
Download	4N60C Download (PDF)

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General.

Key Features

- 4.0A, 600V, RDS(on)typ. = 2.2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60C SLF4N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gat.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
ROUM	4N60	4A 600V N-channel Enhancement Mode Power MOSFET	ROUM
Zibo Seno	4N60	Power MOSFET	Zibo Seno
	4N60	N-CHANNEL MOSFET	KIA
	4N60	N-CHANNEL POWER MOSFET	UTC
	4N60	N-Channel Power MOSFET	nELL

More Datasheets from Maple Semiconductor

Part Number	Description