SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Chan.
Infineon
04N60C3 - Power Transistor
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Maple Semiconductor
4N60C - 600V N-Channel MOSFET
SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri.
WAYON
WMN14N60C2 - Super Junction Power MOSFET
WML14N60C2, WMK14N60C2, WMM14N60C2 WMN14N60C2, WMP14N60C2, WMO14N60C2 600V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen.
Excelliance MOS
EMD04N60CSK - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 3.3Ω ID 4A G UIS, 100% Tested S .
WAYON
WML04N60C2 - Super Junction Power MOSFET
WML04N60C2 600V 1.7Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation super junction MOSFET family that is utilizing charg.
WAYON
WML14N60C2 - Super Junction Power MOSFET
WML14N60C2, WMK14N60C2, WMM14N60C2 WMN14N60C2, WMP14N60C2, WMO14N60C2 600V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen.
WAYON
WMP04N60C2 - Super Junction Power MOSFET
WMH04N60C2, WMG04N60C2 WMP04N60C2, WMO04N60C2 600V 1.7Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation super junction MO.
IXYS
IXKP24N60C5 - CoolMOS Power MOSFET
IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID2.
JILIN SINO-MICROELECTRONICS
JCS4N60CB - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC LED APPLICATIO.
Infineon
SPU04N60C2 - Cool MOS Power Transistor
Final data SPD04N60C2 SPU04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic a.
Infineon
SPN04N60C2 - Cool MOS Power Transistor
Final data SPN04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 Product Su.
Infineon
SPA04N60C2 - Cool MOS Power Transistor
Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge .
Infineon
SPP04N60C2 - Cool MOS Power Transistor
Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge .
IXYS Corporation
IXGH24N60CD1 - HiPerFAST IGBT
HiPerFASTTM IGBT with Diode Lightspeed Series Preliminary data IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V www.DataSheet4U.
IXYS Corporation
IXGP24N60C - HiPerFAST IGBT
HiPerFASTTM IGBT LightspeedTM Series IXGA 24N60C IXGP 24N60C VCES IC25 VCE(sat)typ tfi typ = 600 V = 48 A = 2.1 V = 60 ns Symbol VCES VCGR VGES VG.
HAOHAI
FQP4N60C - N-Channel MOSFET
4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs .
Excelliance MOS
EMD04N60CSB - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.4Ω ID 4A G UIS, 100% Tested S .
Excelliance MOS
EMD04N60CS - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.5Ω ID 4A G UIS, 100% Tested S .
WAYON
WMP14N60C2 - Super Junction Power MOSFET
WML14N60C2, WMK14N60C2, WMM14N60C2 WMN14N60C2, WMP14N60C2, WMO14N60C2 600V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen.
