4N60C Datasheet | Specifications & PDF Download

SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs

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SPW24N60C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extre

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Silan Microelectronics SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF4N60CAF/K/D/T/MN/MJ is an N-channel enh

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WML14N60C2, WMK14N60C2, WMM14N60C2 WMN14N60C2, WMP14N60C2, WMO14N60C2 600V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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6331 & 63$1 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax  9 5'6

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isc N-Channel MOSFET Transistor SPP24N60C3，ISPP24N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.16Ω ·Enhancement mode ·Fast Switchin

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SLB4N60C / SLI4N60C SLB4N60C / SLI4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar s

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Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge

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SPW24N60C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extre

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic a

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 3.3Ω ID 4A G UIS, 100% Tested S

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SLP4N60C / SLF4N60C SLP4N60C / SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

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Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge

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WML04N60C2 600V 1.7Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation super junction MOSFET family that is utilizing charg

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N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC    LED APPLICATIO

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Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge

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