4N60C Datasheet | Specifications & PDF Download

SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs

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IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID2

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63'1 & 6381 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax  9 5'6

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N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC    LED APPLICATIO

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SPW24N60C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extre

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche voltage and cur

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isc N-Channel MOSFET Transistor IXKP24N60C5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche vo

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IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID2

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Chip Integration Technology Corporation MHF04N60CT Silicon N-Channel Power MOSFET Main Product Characteristics ID VDSS PD(TC=25oC) RDS(ON)Typ 4A 6

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HiPerFASTTM IGBT LightspeedTM Series IXGH 24N60C IXGT 24N60C VCES IC25 VCE(sat)typ tfi typ = 600 V = 48 A = 2.1 V = 60 ns Preliminary data www.Da

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HiPerFASTTM IGBT with Diode Lightspeed Series Preliminary data IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V www.DataSheet4U

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HiPerFASTTM IGBT LightspeedTM Series IXGH 24N60C IXGT 24N60C VCES IC25 VCE(sat)typ tfi typ = 600 V = 48 A = 2.1 V = 60 ns Preliminary data www.Da

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HiPerFASTTM IGBT with Diode Lightspeed Series Preliminary data IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V www.DataSheet4U

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.4Ω ID 4A G UIS, 100% Tested S

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FTP04N60C FTA04N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • Charger • SMPS Standby Power Features: • RoHS Compli

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CYStech Electronics Corp. Spec. No. : C081FP Issued Date : 2016.02.18 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN4N6

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Silan Microelectronics SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF4N60CAF/K/D/T/MN/MJ is an N-channel enh

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www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM IXGR 24N60C (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2

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