4N60C - 600V N-Channel MOSFET

Maple Semiconductor

Datasheet Details

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 4.0A, 600V, RDS(on)typ. = 2.2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60C SLF4N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gat.

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Published: Dec 27, 2018 |