4N60C Datasheet, Mosfet, Maple Semiconductor

4N60C Features

• Mosfet - 4.0A, 600V, RDS(on)typ. = 2.2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS

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Part number:

4N60C

Manufacturer:

Maple Semiconductor

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299.91kb

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📄 Datasheet

Description:

600v n-channel mosfet. This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially

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4N60C

Maple Semiconductor

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