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4N60C Datasheet - Maple Semiconductor

4N60C - 600V N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices

4N60C Features

* - 4.0A, 600V, RDS(on)typ. = 2.2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60C SLF4N60C VD

4N60C-MapleSemiconductor.pdf

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Datasheet Details

Part number:

4N60C

Manufacturer:

Maple Semiconductor

File Size:

299.91 KB

Description:

600v n-channel mosfet.

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