* fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
* Enhanced total power density Applications
* Switched mode power s
IXKH24N60C5 Datasheet (109.50 KB)
IXKH24N60C5
IXYS
109.50 KB
Coolmos power mosfet.
IXKH 24N60C5 IXKP 24N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
Preliminary data
ID2.
📁 Related Datasheet
IXKH24N60C5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche voltage and cur.
IXKH20N60C5 - Power MOSFET
(IXYS)
IXKH 20N60C5 IXKP 20N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
D
ID25 = 20 A VDSS =.
IXKH20N60C5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 0.2Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXKH30N60C5 - Power MOSFET
(IXYS)
IXKH 30N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
D
ID25 = 30 A VDSS = 600 V RDS(on.
IXKH30N60C5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 125mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXKH35N60C5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 100mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXKH35N60C5 - Power MOSFET
(IXYS)
IXKH 35N60C5
COOLMOS® * Power MOSFET
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET Ultra low gate charge
D
G S
ID25
= 35 A
VDSS
= 600 .
IXKH47N60C - Power MOSFET
(IXYS)
IXKH 47N60C
CoolMOS™ 1) Power MOSFET
Low RDSon, high VDSS Superjunction MOSFET
D
VDSS = 600 V ID25 = 47 A RDS(on) max = 70 mΩ
TO-247
G
G D S S
q.
