IXKH24N60C5, IXKP24N60C5 Datasheet - IXYS

IXKH24N60C5 CoolMOS Power MOSFET

IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID25 = 24 A VDSS = 600 V RDS(on) max = 0.165 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 7.9 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0480 V Maximum Ratings 600 V ± 20 V 24 A 16 A 522 mJ 0.79 mJ 50 V/ns Sym.

IXKH24N60C5 Features

* fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness

* Enhanced total power density Applications

* Switched mode power s

IXKP24N60C5-IXYS.pdf