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IXKC13N80C

CoolMOS Power MOSFET

IXKC13N80C Features

* Conditions TVJ = 25°C Maximum Ratings 800 V

* Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A

* 3rd generation CoolMOS™ 1) power 9 A MOSFET TJ start = 25°C; s

IXKC13N80C Datasheet (440.47 KB)

Preview of IXKC13N80C PDF

Datasheet Details

Part number:

IXKC13N80C

Manufacturer:

IXYS Corporation

File Size:

440.47 KB

Description:

Coolmos power mosfet.
Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Elect.

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TAGS

IXKC13N80C CoolMOS Power MOSFET IXYS Corporation

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