* Conditions TVJ = 25°C Maximum Ratings 800 V
* Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A
* 3rd generation CoolMOS™ 1) power 9 A MOSFET TJ start = 25°C; s
IXKC13N80C Datasheet (440.47 KB)
IXKC13N80C
IXYS Corporation
440.47 KB
Coolmos power mosfet.
Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Elect.
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