IXKC25N80C Datasheet - IXYS

IXKC25N80C - Power MOSFET

www.DataSheet4U.com Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol VDSS VGS VGSM ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 90°C Package lead current limit Io Io = 10A, TC = 25°C = 20A IXKC 25N80C VDSS = 800.

IXKC25N80C Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMos power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due t

IXKC25N80C_IXYS.pdf

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Datasheet Details

Part number:

IXKC25N80C

Manufacturer:

IXYS

File Size:

581.17 KB

Description:

Power mosfet.

IXKC25N80C Distributor

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IXKC25N80C Power MOSFET IXYS