* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMos power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due t
IXKC25N80C Datasheet (581.17 KB)
IXKC25N80C
IXYS
581.17 KB
Power mosfet.
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Power MOSFET ISOPLUS220TM
Electrically Isolated Back Surface
Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminar.
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