* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due t
IXKG25N80C Datasheet (525.98 KB)
IXKG25N80C
IXYS Corporation
525.98 KB
Coolmos power mosfet iso264.
www.DataSheet4U.com
ADVANCE TECHNICAL INFORMATION
CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM
Electrically Isolated Back Surface
N-Channel Enhanceme.
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