Datasheet Specifications
- Part number
- IXKG25N80C
- Manufacturer
- IXYS Corporation
- File Size
- 525.98 KB
- Datasheet
- IXKG25N80C_IXYSCorporation.pdf
- Description
- CoolMOS Power MOSFET ISO264
Description
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhanceme.
Features
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due tApplications
* Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) z Power Factor Correction (PFC) z Welding z Inductive Heating z z RDS(on) VGS(th) IDSS IGSS VGS = 10 V, ID = ID90, Note 1 VGS = 10 V, ID = ID90, Note 1 TJ = 125°C VDS = VGS, ID = 2 mA VDS = VDSS VGS = 0 V VGS = ±20 VDC, VDS =IXKG25N80C Distributors
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