IXKN40N60C - CoolMOS Power MOSFET

IXYS Corporation

Datasheet Details

q 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly Fast CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density q MOSFET Symbol.

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Published: Dec 27, 2006 |