IXKN40N60C Datasheet - IXYS Corporation

IXKN40N60C CoolMOS Power MOSFET

www.DataSheet4U.com Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600 V ID25 40 A RDS(on) 70 mW Symbol VDSS VGS ID25 ID90 EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Conditions TJ = 25°C to 150°C Maximum Ratings 600 ±20 V V miniBLOC, SOT-227 B E72873 S G TC = 25°C TC = 90°C ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive VDS £ VDSS, IS = 47 A, diS/dt = 100 A/µs, TJ = TJM.

IXKN40N60C Features

* q 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly Fast CoolMOS power MOSFET - High

IXKN40N60C_IXYSCorporation.pdf