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IXKC15N60C5

Power MOSFET

IXKC15N60C5 Features

* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)

* Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated f

IXKC15N60C5 Datasheet (109.74 KB)

Preview of IXKC15N60C5 PDF

Datasheet Details

Part number:

IXKC15N60C5

Manufacturer:

IXYS

File Size:

109.74 KB

Description:

Power mosfet.
Advanced Technical Information IXKC 15N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.

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IXKC15N60C5 Power MOSFET IXYS

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