IXKC40N60C Datasheet - IXYS Corporation

IXKC40N60C CoolMOS Power MOSFET

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage,, MOSFET IXKC 40N60C VDSS = 600 V ID25 = 28 A RDS(on) = 96 mΩ Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 Package lead current limit Io Io = 10A, TC = 25°C = 20A Maximum Ratings 600 ±20 28 19 45 690 1 250 -5.

IXKC40N60C Features

* l 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 65 / 2.4 11 N/lb 3 g l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation 2ND generation CoolMOS power MO

IXKC40N60C_IXYSCorporation.pdf