IXKC40N60C Datasheet, Mosfet, IXYS Corporation

IXKC40N60C Features

  • Mosfet l 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 65 / 2.4 11 N/lb 3 g l l l Silicon chip on Direct-Copper-Bond substrat

PDF File Details

Part number:

IXKC40N60C

Manufacturer:

IXYS Corporation

File Size:

83.34kb

Download:

📄 Datasheet

Description:

Coolmos power mosfet.

Datasheet Preview: IXKC40N60C 📥 Download PDF (83.34kb)
Page 2 of IXKC40N60C

IXKC40N60C Application

  • Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 230 3.5 TJ = 25°C TJ = 125°C 20

TAGS

IXKC40N60C
CoolMOS
Power
MOSFET
IXYS Corporation

📁 Related Datasheet

IXKC13N80C - CoolMOS Power MOSFET (IXYS Corporation)
Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Elect.

IXKC13N80C - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 290mΩ@VGS=10V ·100% avalanche tested .

IXKC15N60C5 - Power MOSFET (IXYS)
Advanced Technical Information IXKC 15N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.

IXKC15N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari.

IXKC19N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·100% avalanche tested .

IXKC19N60C5 - Power MOSFET (IXYS)
Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.

IXKC20N60C - CoolMOS Power MOSFET (IXYS Corporation)
IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS .

IXKC20N60C - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V ·100% avalanche tested .

IXKC23N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·100% avalanche tested .

IXKC23N60C5 - Power MOSFET (IXYS)
IXKC 23N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS.

Stock and price

part
IXYS Corporation
MOSFET N-CH 600V 28A ISOPLUS220
DigiKey
IXKC40N60C
0 In Stock
Qty : 50 units
Unit Price : $7.4
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts