IXKC40N60C - CoolMOS Power MOSFET

IXYS Corporation

Datasheet Details

l 1.6 mm (0.062 in. ) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 65 / 2.4 11 N/lb 3 g l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation 2ND generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) Low thermal resistance due to reduced chip thickness Low drain to tab capacitance(.

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Published: Dec 27, 2006 |