IXKC40N60C Datasheet - IXYS Corporation

IXKC40N60C, CoolMOS Power MOSFET

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode Lo.

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IXKC40N60C_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXKC40N60C

Manufacturer:

IXYS Corporation

File Size:

83.34 KB

Description:

CoolMOS Power MOSFET

Features

* l 1.6 mm (0.062 in. ) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 65 / 2.4 11 N/lb 3 g l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation 2ND generation CoolMOS power MO

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 230 3.5 TJ = 25°C TJ = 125°C 20 ±200 96 m Ω mΩ 5.5 2 V µA µA nA l l l l l RDS(on) VGS(th) IDSS IGSS VGS = 10 V, ID = ID90, Note 3 VGS = 10 V, ID = ID90, Note 3 TJ = 125°C VDS = VGS, ID = 2 mA VDS

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IXKC40N60C CoolMOS Power MOSFET IXYS Corporation

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