* l 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 65 / 2.4 11 N/lb 3 g l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation 2ND generation CoolMOS power MO
IXKC40N60C Datasheet (83.34 KB)
IXKC40N60C
IXYS Corporation
83.34 KB
Coolmos power mosfet.
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode Lo.
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