IXKF40N60SCD1 Datasheet - IXYS Corporation

IXKF40N60SCD1 CoolMOS Power MOSFET

IXKF 40N60SCD1 CoolMOS™ 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ 5 Preliminary data DS DF 1T 2 VDSS = 600 V ID25 = 41 A R DS(on) typ. = 60 mΩ trr = 70 ns ISOPLUS i4-PAC™ 1 2 5 E72873 MOSFET T Symbol Conditions VDSS VGS ID25 ID90 TVJ = 25°C to 150°C TC = 25°C TC = 90°C Maximum Ratings 600 V ± 20 V 41 A 29 A Symbol RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec(off) RthJC RthJH Con.

IXKF40N60SCD1 Features

* fast CoolMOS™ 1) power MOSFET 3rd generation - high blocking voltage - low on resistance - low thermal resistance due to reduced chip thickness

* Series Schottky diode prevents current flow through MOSFET’s body diode - very low forward voltage - fast switching

IXKF40N60SCD1_IXYSCorporation.pdf