* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
* CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for
IXKC20N60C Datasheet (228.08 KB)
IXKC20N60C
IXYS Corporation
228.08 KB
Coolmos power mosfet.
IXKC 20N60C
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS .
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