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IXKC20N60C - CoolMOS Power MOSFET

IXYS Corporation

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Datasheet Details

Part number	IXKC20N60C
Manufacturer	IXYS Corporation
File Size	228.08 KB
Description	CoolMOS Power MOSFET
Datasheet	IXKC20N60C_IXYSCorporation.pdf

IXKC20N60C Product details

Features

Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF).
CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness.
Enhanced total power density.

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Published: Dec 27, 2006 |