IXKC20N60C Datasheet - IXYS Corporation

IXKC20N60C, CoolMOS Power MOSFET

IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS .

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IXKC20N60C_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXKC20N60C

Manufacturer:

IXYS Corporation

File Size:

228.08 KB

Description:

CoolMOS Power MOSFET

Features

* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
* CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for

Applications

* Switched mode power supplies (SMPS)
* Uninterruptible power supplies (UPS)
* Power factor correction (PFC)
* Welding
* Inductive heating
* PDP and LCD adapter Advantages
* Easy assembly: no screws or isolation foils required
* Space s

IXKC20N60C Distributors

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IXKC20N60C CoolMOS Power MOSFET IXYS Corporation

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