IXKC20N60C Datasheet - IXYS Corporation

IXKC20N60C CoolMOS Power MOSFET

IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge D G S VDSS = 600 V ID25 = 15 A RDS(on) max = 190 mΩ ISOPLUS220TM G D S E72873 q isolated tab MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse; ID = 10 A; TC = 25°C repetitive; ID = 20 A; TC = 25°C Maximum Ratings 600 V ± 20 V 15 A 10.5 A 690 mJ 1 mJ Symbol .

IXKC20N60C Features

* Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)

* CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for

IXKC20N60C Datasheet (228.08 KB)