IXKC19N60C5 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IXKC19N60C5
Manufacturer: INCHANGE
File Size: 257.37 KB
Datasheet: IXKC19N60C5-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* High power dissipation
* Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 19 IDM Drain Current-Single Pulsed 15 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A ℃ ℃

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IXKC19N60C5 N-Channel MOSFET INCHANGE

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