Datasheet4U Logo Datasheet4U.com

IXKN45N80C

CoolMOS Power MOSFET

IXKN45N80C Features

* RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 4 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 640 V; ID = 70 A miniBLOC package - Electrically isolated copper base - Low coupling capacitance

IXKN45N80C Datasheet (78.34 KB)

Preview of IXKN45N80C PDF

Datasheet Details

Part number:

IXKN45N80C

Manufacturer:

IXYS Corporation

File Size:

78.34 KB

Description:

Coolmos power mosfet.
www.DataSheet4U.com Advanced Technical Information CoolMOS Power MOSFET IXKN 45N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 800.

📁 Related Datasheet

IXKN40N60C - CoolMOS Power MOSFET (IXYS Corporation)
.. Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600.

IXKN75N60C - CoolMOS Power MOSFET (IXYS Corporation)
.. CoolMOS Power MOSFET IXKN 75N60C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600 V ID25 75 A RDS(on) 35 mΩ Pr.

IXKC13N80C - CoolMOS Power MOSFET (IXYS Corporation)
Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Elect.

IXKC13N80C - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 290mΩ@VGS=10V ·100% avalanche tested .

IXKC15N60C5 - Power MOSFET (IXYS)
Advanced Technical Information IXKC 15N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.

IXKC15N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari.

IXKC19N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·100% avalanche tested .

IXKC19N60C5 - Power MOSFET (IXYS)
Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan.

TAGS

IXKN45N80C CoolMOS Power MOSFET IXYS Corporation

Image Gallery

IXKN45N80C Datasheet Preview Page 2

IXKN45N80C Distributor