Datasheet4U Logo Datasheet4U.com

IXKH70N60C5

Power MOSFET

IXKH70N60C5 Features

* fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness

* Enhanced total power density Applications

* Switched mode power sup

IXKH70N60C5 Datasheet (126.25 KB)

Preview of IXKH70N60C5 PDF

Datasheet Details

Part number:

IXKH70N60C5

Manufacturer:

IXYS

File Size:

126.25 KB

Description:

Power mosfet.
IXKH 70N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 70 A VDSS = 600 V RDS(on.

📁 Related Datasheet

IXKH70N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.

IXKH20N60C5 - Power MOSFET (IXYS)
IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 20 A VDSS =.

IXKH20N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.2Ω@VGS=10V ·Fully characterized avalanche voltage and curre.

IXKH24N60C5 - CoolMOS Power MOSFET (IXYS)
IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID2.

IXKH24N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche voltage and cur.

IXKH30N60C5 - Power MOSFET (IXYS)
IXKH 30N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 30 A VDSS = 600 V RDS(on.

IXKH30N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXKH35N60C5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

TAGS

IXKH70N60C5 Power MOSFET IXYS

Image Gallery

IXKH70N60C5 Datasheet Preview Page 2 IXKH70N60C5 Datasheet Preview Page 3

IXKH70N60C5 Distributor