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ME04N25-G Datasheet N-Channel MOSFET

Manufacturer: Matsuki

Overview: N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G GENERAL.

Download the ME04N25-G datasheet PDF. This datasheet also includes the ME04N25 variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number ME04N25-G
Manufacturer Matsuki
File Size 480.44 KB
Description N-Channel MOSFET
Download ME04N25-G Download (PDF)

General Description

The ME04N25 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦1.8Ω@VGS=10V.
  • RDS(ON)≦2.0Ω@VGS=5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.