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ME20N10 Datasheet N-Channel 100V (D-S) MOSFET

Manufacturer: Matsuki

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Datasheet Details

Part number ME20N10
Manufacturer Matsuki
File Size 528.85 KB
Description N-Channel 100V (D-S) MOSFET
Datasheet download datasheet ME20N10 Datasheet

General Description

The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.

Overview

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL.

Key Features

  • RDS(ON)≦78mΩ@VGS=10V.
  • RDS(ON)≦98mΩ@VGS=5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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