ME2N7002D Description
The ME2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching ,...
ME2N7002D Key Features
- Simple Drive Requirement
- Small Package Outline
- ROHS pliant
- ESD Rating = 2000V HBM
- High density cell design for low RDS(ON)
- Voltage controlled small signal switching
- Rugged and reliable
- High saturation current capability
- High-speed switching
- Not thermal runaway