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ME4970A-G Datasheet - Matsuki

Dual N-Channel MOSFET

ME4970A-G Features

* RDS(ON)≦14mΩ@VGS=10V

* RDS(ON)≦20mΩ@VGS=4.5V DMOS trench technology. This high density process is especially

* Super high density cell design for extremely low RDS(ON) tailored to minimize on-state resistance. These devices are

* Exceptional on-resistance and maximum DC current

ME4970A-G Datasheet (970.13 KB)

Preview of ME4970A-G PDF

Datasheet Details

Part number:

ME4970A-G

Manufacturer:

Matsuki

File Size:

970.13 KB

Description:

Dual n-channel mosfet.

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ME4970A-G Dual N-Channel MOSFET Matsuki

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