ME4970A-G mosfet equivalent, dual n-channel mosfet.
* RDS(ON)≦14mΩ@VGS=10V
* RDS(ON)≦20mΩ@VGS=4.5V
DMOS trench technology. This high density process is especially
* Super high density cell design for extremel.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,
FEATURES
* RDS(ON)≦14mΩ@VGS=10V
* RDS(ON)≦20mΩ@VGS=4.5V
DMOS trench technology. This high density process is esp.
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