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ME70N03 - N-Channel Enhancement Mode MOSFET

Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current TO-252(D-PAK) Top View G D S mi Gate Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Pulsed Drain Symbol V DS ID V GS I DM PD TJ na Drain.

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Datasheet Details

Part number ME70N03
Manufacturer Matsuki
File Size 164.76 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME70N03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 30V N-Channel Enhancement Mode MOSFET V DS =30V R DS(ON) ,Vgs@10V,Ids@45A=6 m Ù R DS(ON) ,Vgs@4.5V,Ids@30A=10 m Ù FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current TO-252(D-PAK) Top View G D S mi Gate Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Pulsed Drain Symbol V DS ID V GS I DM PD TJ na Drain INTERNAL SCHEMATIC DIAGRAM Unless Otherwise Noted) Limit 30 20 60 350 70 42 -55 to 150 300 1.
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