Microchip Technology VRF141
The VRF141(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. Device Specifications This section shows the specifications of the VRF141(MP) device.| Part No. | VRF141 |
|---|---|
| Datasheet | VRF141 Download |
| Manufacturer |  Microchip Technology |
| Description | 175MHz RF Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Improved ruggedness V(BR)DSS = 80 V● 150 W with 22 dB typical gain at 30 MHz, 28 V
● 150 W with 13 dB typical gain at 175 MHz, 28 V
● Excellent stability and low IMD
● Common source configuration
● Available in matched pairs (VRF141MP)
● 30:1 load VSWR capability at specified operating conditions
● Nitride passivated
● Refractory gold metallization
● High voltage replacement for MRF141
● RoHS compliant © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004329A-page 1 VRF141, VRF141MP Device Specifications 1. 1.1
ABSOLUTE MAXIMUM RATINGS
The following table shows the absolute maximum ratings of the VRF141(MP) device. TC = 25 °C unless otherwise specified. Table 1-1.ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain source voltage Continuous drain current at TC = 25 °C Gate-source voltage Total power dissipation at TC = 25 °C Storage temperature range Operating junction temperature Ratings Unit 80 V 20 A ±40 V 300 W –65 to 150 °C 200 1.2 Electrical Performance The following table shows the static characteristics of the VRF141(MP) device.
