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2N3507 - NPN MEDIUM POWER SILICON TRANSISTOR

Product Overview

Microsemi

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2N3507 NPN MEDIUM POWER SILICON TRANSISTOR by Microsemi - Datasheet Preview — Datasheet preview – 2N3507

Datasheet Details

Part number	2N3507
Manufacturer	Microsemi
File Size	264.88 KB
Description	NPN MEDIUM POWER SILICON TRANSISTOR
Datasheet	2N3507 Datasheet
Note	This datasheet PDF includes multiple part numbers: 2N3507, 2N3506. Please refer to the document for exact specifications by model.
Additional preview pages of the 2N3507 datasheet.

Product details

Description

This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage.

Features

JEDEC registered 2N3506 through 2N3507A series.
RoHS compliant versions available (commercial grade only).
VCR(sat) = 0.5 V @ IC = 500 mA.
Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.

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Other Datasheets by Microsemi

2N3507A - NPN MEDIUM POWER SILICON TRANSISTOR
2N3507AL - NPN MEDIUM POWER SILICON TRANSISTOR
2N3506 - NPN MEDIUM POWER SILICON TRANSISTOR
2N3506A - NPN MEDIUM POWER SILICON TRANSISTOR
2N3506AL - NPN MEDIUM POWER SILICON TRANSISTOR
2N3506L - NPN MEDIUM POWER SILICON TRANSISTOR

Published: May 16, 2017 |