2N3507, 2N3506 Datasheet - Microsemi

2N3507 - NPN MEDIUM POWER SILICON TRANSISTOR

2N3507 Features

* JEDEC registered 2N3506 through 2N3507A series.

* RoHS compliant versions available (commercial grade only).

* VCR(sat) = 0.5 V @ IC = 500 mA.

* Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.

* Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.

Datasheet Details

2N3507, 2N3506

264.88 KB

Npn medium power silicon transistor.

This datasheet PDF includes multiple part numbers: 2N3507, 2N3506.
Please refer to the document for exact specifications by model.

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