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2N3507 - NPN MEDIUM POWER SILICON TRANSISTOR

This page provides the datasheet information for the 2N3507, a member of the 2N3506 NPN MEDIUM POWER SILICON TRANSISTOR family.

Description

This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage.

These devices are also available in TO-5 and low profile U4 packaging.

Features

  • JEDEC registered 2N3506 through 2N3507A series.
  • RoHS compliant versions available (commercial grade only).
  • VCR(sat) = 0.5 V @ IC = 500 mA.
  • Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
  • Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.

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Datasheet preview – 2N3507

Datasheet Details

Part number 2N3507
Manufacturer Microsemi
File Size 264.88 KB
Description NPN MEDIUM POWER SILICON TRANSISTOR
Datasheet download datasheet 2N3507 Datasheet
Additional preview pages of the 2N3507 datasheet.

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Full PDF Text Transcription

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2N3506 thru 2N3507A Available on commercial versions NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Qualified Levels: JAN, JANTX and JANTXV Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3506 through 2N3507A series. • RoHS compliant versions available (commercial grade only). • VCR(sat) = 0.5 V @ IC = 500 mA.
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