2N3507A Features
* JEDEC registered 2N3506 through 2N3507A series.
* RoHS compliant versions available (commercial grade only).
* VCR(sat) = 0.5 V @ IC = 500 mA.
* Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
* Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.
Datasheet Details
2N3507A, 2N3506
264.88 KB
Npn medium power silicon transistor.
This datasheet PDF includes multiple part numbers: 2N3507A, 2N3506.
Please refer to the document for exact specifications by model.
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2N3507A Distributor
