2N3506 Datasheet - Microsemi

2N3506 NPN MEDIUM POWER SILICON TRANSISTOR

2N3506 Features

* JEDEC registered 2N3506 through 2N3507A series.

* RoHS compliant versions available (commercial grade only).

* VCR(sat) = 0.5 V @ IC = 500 mA.

* Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.

* Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.

Datasheet Details

2N3506

264.88 KB

Npn medium power silicon transistor.

📁 Related Datasheet

2N3500 NPN Transistor (Semicoa Semiconductor)

2N3500 GENERAL PURPOSE TRANSISTOR (Boca Semiconductor Corporation)

2N3500 NPN SILICON PLANAR RF TRANSISTORS (CDIL)

2N3500 NPN SILICON SWITCHING TRANSISTOR (Microsemi)

2N3500 GENERAL PURPOSE TRANSISTOR (Motorola)

2N3500 NPN Medium Power Silicon Transistor (VPT)

2N3500L NPN Transistor (Semicoa Semiconductor)

2N3500L NPN SILICON SWITCHING TRANSISTOR (Microsemi)

TAGS

2N3506 2N3506 NPN MEDIUM POWER SILICON TRANSISTOR Microsemi

2N3506 Distributor