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2N3506 - NPN MEDIUM POWER SILICON TRANSISTOR

Microsemi

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Datasheet Details

Part number	2N3506
Manufacturer	Microsemi
File Size	264.88 KB
Description	NPN MEDIUM POWER SILICON TRANSISTOR
Datasheet	2N3506-Microsemi.pdf

2N3506 Product details

Description

This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage.

Features

JEDEC registered 2N3506 through 2N3507A series.
RoHS compliant versions available (commercial grade only).
VCR(sat) = 0.5 V @ IC = 500 mA.
Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.

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Other Datasheets by Microsemi

2N3506A - NPN MEDIUM POWER SILICON TRANSISTOR
2N3506AL - NPN MEDIUM POWER SILICON TRANSISTOR
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Published: May 16, 2017 |