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  Microsemi Electronic Components Datasheet  

APT11N80BC3G Datasheet

Super Junction MOSFET

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APT11N80BC3G
800V 11A 0.45Ω
Super Junction MOSFET
TO-247
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 Package
D
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specif ed.
APT11N80BC3G
UNIT
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
800
11
33
±20
±30
156
1.25
Volts
Amps
Volts
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
260
50
11
0.2
470
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.1A)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 680μA)
800
Volts
0.39 0.45 Ohms
0.5
20
μA
200
±100 nA
2.1
3
3.9 Volts
"COOLMOScomprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG"


  Microsemi Electronic Components Datasheet  

APT11N80BC3G Datasheet

Super Junction MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
APT11N80BC3G
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 11A @ 25°C
RESISTIVE SWITCHING
VGS = 10V
VDD = 400V
ID = 11A @ 25°C
RG = 7.5Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 11A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 533V VGS = 15V
ID = 11A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
1585
770
18
60
8
30
25
15
70
80
7
10
165
50
305
65
MIN TYP MAX
pF
nC
ns
μJ
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD
Diode Forward Voltage 2 (VGS = 0V, IS = -11A)
t rr
Reverse Recovery Time (IS = 11A, dlS/dt = -100A/μs, VR = 640V)
Q rr Reverse Recovery Charge (IS = 11A, dlS/dt = -100A/μs, VR = 640V)
dv/dt
Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
Symbol Characteristic
11
Amps
33
1
1.2
Volts
550
ns
10
μC
6
V/ns
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.80
62
°C/W
1 Repetitve avalanche causes additional power losses that can
be calculated as PAV=EAR*f
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4
5
dSdvet/avdritctinenugimtsTebj l=ef.r+s2ISr5e≤°fCe-c,IDtLt1h=1eA1l9im4dmii/tadHtti,≤oR7n0sG0o=Af /2tμh5seΩt,eVPsRet≤acikVrcDIuLSiS=t r2aT.t2JhA≤er1t5h0a°nCthe
6 Eon includes diode reverse recovery. See f gures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
APT Reserves the right to change, without notice, the specications and infcoarmlcautliaotnedcoanstaPinAVe=dEhAeR*ref in.
0.90
0.80
0.9
0.70
0.60
0.7
0.50
0.40
0.5
0.30
0.3
0.20
0.10
0.1
0.05
SINGLE PULSE
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT11N80BC3G
Description Super Junction MOSFET
Maker Microsemi
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APT11N80BC3G Datasheet PDF






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