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MG1007 Microsemi (https://www.microsemi.com/) GUNN Diodes

Title
Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9– 95 GHz. IMPORTANT: For the m...
Features
● CW Designs to 500 mW
● Pulsed Designs to 10 W
● Frequency Coverage Specified from 5.9
  –95 GHz
● Low Phase Noise
● High Reliability Applications
● Motion Detectors
● Transmitters and Receivers
● Beacons
● Automotive Collision Avoidance Radars
● Radars
● Radiometers
● Instrumentation Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heats...

Datasheet PDF File MG1007 Datasheet - 205.73KB
Distributor Distributor
element14 Asia-Pacific
Stock 0 In stock
Price
1 units: 48618 KRW
BuyNow BuyNow BuyNow - Manufacturer a MakerGear MG1007

MG1007   MG1007   MG1007  



MG1007 Distributor

Distributor Stock Price BuyNow
Distributor
element14 Asia-Pacific
0
1 units: 48618 KRW
MakerGear

BuyNow
Distributor
Microchip Technology Inc
0
1000 units: 250.16 USD
500 units: 255.16 USD
250 units: 265.17 USD
100 units: 277.68 USD
50 units: 295.19 USD
1 units: 307.7 USD
Microchip Technology Inc

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Distributor
NAC
0
No price available
Flexxon Pte Ltd

Distributor
Richardson RFPD
0
No price available
Microsemi Corporation





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