MRF581G Datasheet RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacturer: Microsemi (now Microchip Technology)

Download the MRF581G datasheet PDF. This datasheet also includes the MRF581 variant, as both parts are published together in a single manufacturer document.

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MRF581G rf & microwave discrete low power transistors by Microsemi (now Microchip Technology) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MRF581-Microsemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MRF581G
Manufacturer	Microsemi (now Microchip Technology)
File Size	142.47 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	MRF581G Datasheet

General Description

: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current MRF581 MRF581A 18 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D P D Tstg Total Device Dissipation @ TC = 50ºC Derate above 50ºC Total Device Dissipation @ TC = 25ºC Derate above 25ºC Storage Junction Temperature Range TJmax Maximum Junction Temperature Revision A- December 2008 2.5 25 1.25 10 -65 to +150 150 Microsemi reserves the right to change, without notice, the specifications and information contained herein V

Overview

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal.

Key Features

Low Noise - 2.5 dB @ 500 MHZ.
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz.
Ftau - 5.0 GHz @ 10v, 75mA.
Cost Effective MacroX Package Macro X.

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