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VRF3933 Datasheet

RF POWER VERTICAL MOSFET

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RF POWER VERTICAL MOSFET
The VRF3933 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
VRF3933
VRF3933(MP)
100V, 300W, 150MHz
D
SS
G
FEATURES
• Improved Ruggedness V(BR)DSS = 250V
• 300W with 22dB Typ. Gain @ 30MHz, 100V
• Excellent Stability & Low IMD
• Common Source Configuration
• Available in Matched Pairs
• 3:1 Load VSWR Capability at Specified Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Improved Replacement for SD3933
• Thermally Enhanced Package
• RoHS Compliant
Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Continuous Drain Current @ TC = 25°C
VGS Gate-Source Voltage
PD Total Device dissipation @ TC = 25°C
TSTG Storage Temperature Range
TJ Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specified
VRF3933
Unit
250 V
20 A
±40 V
648 W
-65 to 150
200
°C
Static Electrical Characteristics
Symbol
Parameter
V(BR)DSS
VDS(ON)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 10A, VGS = 10V)
IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
gfs Forward Transconductance (VDS = 10V, ID = 10A)
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min Typ Max Unit
250 260
2.7 4.0
V
2.0 mA
2.0 μA
8 12
mhos
2.9 3.6 4.4
V
Thermal Characteristics
Symbol
Characteristic
RθJC
Junction to Case Thermal Resistance
Min Typ Max Unit
0.27 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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  Microsemi Electronic Components Datasheet  

VRF3933 Datasheet

RF POWER VERTICAL MOSFET

No Preview Available !

Dynamic Characteristics
Symbol
Parameter
CISS Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Functional Characteristics
Symbol
Parameter
GPS f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 300W
ηD f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 300W
ψ f1 = 30MHz, VDD =100V, IDQ = 250mA, Pout = 300W
Test Conditions
VGS = 0V
VDS = 50V
f = 1MHz
3:1 VSWR - All Phase Angles
VRF3933(MP)
Min Typ Max Unit
850
300 pF
30
Min Typ Max Unit
23 26
dB
50 %
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
40
35
17V
10V
7V
30
6V
25
20 5.5V
15
10
5
0
0
5
5V
10 15
4.5V
4V
3.5V
20 25 30 35
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
10,000
1,000
Ciss
Coss
100
Crss
10
0
50 100 150 200 250
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
40
250µs PULSE
TEST<0.5 % DUTY
35 CYCLE
TJ= -55°C
30
TJ= 25°C
25
20 TJ= 125°C
15
10
5
0
0
1 2 345 678
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
120
100
IDMax
10
Rds(on)
TTJC==17255°°CC
1
1
10
PD Max
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area


Part Number VRF3933
Description RF POWER VERTICAL MOSFET
Maker Microsemi
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